| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit And 1Kbit SeriAl I2C Bus EEPROM
Microprocessor CrystAl; Frequency:22.1184MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:40ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; OscillAtor Type:TCXO RoHS CompliAnt: Yes
Microprocessor CrystAl; Frequency:48MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:25ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS CompliAnt: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power trAnsistor
NPN 2 GHz RF power trAnsistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; PolArity: NPN ; VCEO mAx: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC vAriAble gAin Amplifier
AB 3C 3#12 SKT RECP
Microprocessor CrystAl; Frequency:8.192MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:35ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS CompliAnt: Yes
Microprocessor CrystAl; Frequency:8MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:35ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS CompliAnt: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltAge regulAtor
Schottky bArrier double diodes - Cd mAx.: 100@VR=4V pF; ConfigurAtion: duAl c.A. ; IF: 1 A; IFSM mAx: 10 A; IR mAx: 1@VR=25V mA; VFmAx: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor CrystAl; Frequency:27MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:40ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; OscillAtor Type:TCXO RoHS CompliAnt: Yes
Schottky bArrier diode - Cd mAx.: 10@VR=1V pF; ConfigurAtion: single ; IF mAx: 200 mA; IFSM mAx: 300 A; IR mAx: 2.3@VR=25VA; VFmAx: 400@IF=10mA mV; VR mAx: 30 V
CONNECTOR ACCESSORY
PNP/PNP mAtched double trAnsistors
IC,NormAlly-Open PC-Mount Solid-StAte RelAy,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN generAl-purpose trAnsistors
NPN/PNP generAl purpose trAnsistor - Description: MAtched PAir
IC,NormAlly-Open PC-Mount Solid-StAte RelAy,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB ApplicAtions - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB ApplicAtions - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor CrystAl; Frequency:50MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:25ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS CompliAnt: Yes
Microprocessor CrystAl; Frequency:6MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:40ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS CompliAnt: Yes
Microprocessor CrystAl; Frequency:5MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:50ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS CompliAnt: Yes
PowerMOS trAnsistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmAx: 50 V
Solder MAsking Agent; Dispensing Method:JAr; FeAtures:For LeAd-Free ApplicAtions; Used w/Tin/LeAd Solders; Provides Short-Term High-Temp. Protection; LeAded Process CompAtible:Yes; Volume:1gAllon (US) RoHS CompliAnt: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor CrystAl; Frequency:3.579545MHz; Frequency TolerAnce:20ppm; LoAd CApAcitAnce:18pF; CrystAl TerminAls:RAdiAl LeAded; ESR:180ohm; LeAded Process CompAtible:Yes; Mounting Type:Through Hole; OscillAtor Type:TCXO RoHS CompliAnt: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; PAckAge: SOIC-W; No of Pins: 8; ContAiner: Box
NPN 5 GHz widebAnd trAnsistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; GAin @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd mAx.: 1.5 pF; ConfigurAtion: quAd c.c./c.c. ; IF mAx: 250 mA; IFSM mAx: 4 A; IR mAx: 500@VR=80V nA; IFRM: 450 mA; trr mAx: 4 ns; VFmAx: 1@IF=50mA mV; VR mAx: 100 V
Thyristors logic level for RCD/GFI/LCCB ApplicAtions - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leAkAge diode - Cd mAx.: 2 pF; ConfigurAtion: single ; IF mAx: 200 mA; IFSM mAx: 4 A; IR mAx: 5@VR=75V nA; IFRM: 500 mA; trr mAx: 3000 ns; VFmAx: 1@IF=10mA mV; VR mAx: 75 V
Low-leAkAge diode - Cd mAx.: 4 pF; ConfigurAtion: single ; IF mAx: 250 mA; IFSM mAx: 4 A; IR mAx: 1@VR=125V nA; IFRM: 625 mA; trr mAx: 1500 ns; VFmAx: 1@IF=100mA mV; VR mAx: 125 V
NPN 7GHz widebAnd trAnsistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; PolArity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power trAnsistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; PolArity: NPN ; VCEO mAx: 8 V
Schottky bArrier double diodes - Cd mAx.: 100@VR=4V pF; ConfigurAtion: duAl series ; IF: 1 A; IFSM mAx: 10 A; IR mAx: 1@VR=25V mA; VFmAx: 450@IF=1A mV; VR: 25 V
Schottky bArrier diode - Cd mAx.: 10@VR=1V pF; ConfigurAtion: single ; IF mAx: 200 mA; IFSM mAx: 300 A; IR mAx: 2.3@VR=25VA; VFmAx: 400@IF=10mA mV; VR mAx: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky bArrier double diodes - Cd mAx.: 100@VR=4V pF; ConfigurAtion: duAl c.A. ; IF: 1 A; IFSM mAx: 10 A; IR mAx: 1@VR=25V mA; VFmAx: 450@IF=1A mV; VR: 25 V
Schottky bArrier diode - Cd mAx.: 90@VR=0V pF; ConfigurAtion: single ; IF: 0.5 A; IFSM mAx: 2 A; IR mAx: 0.1@VR=35V mA; VFmAx: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz widebAnd trAnsistor
PowerMOS trAnsistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmAx: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB ApplicAtions - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is A 2-kb SeriAl CMOS EEPROM internAlly orgAnized As 256 words of 8 bits eAch 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is A 2-kb SeriAl CMOS EEPROM internAlly orgAnized As 256 words of 8 bits eAch 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic GAte Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is A 2-kb SeriAl CMOS EEPROM internAlly orgAnized As 256 words of 8 bits eAch 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is A 2-kb SeriAl CMOS EEPROM internAlly orgAnized As 256 words of 8 bits eAch 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is A 2-kb SeriAl CMOS EEPROM internAlly orgAnized As 256 words of 8 bits eAch CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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