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  1US 121L Datasheet PDF File

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    Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
Part No. MG1200V1US51
Description TOSHIBA GTR MODULE SILICON N&#8722;CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT

File Size 94.78K  /  4 Page

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HUA FENG CIRCUIT





    MG400V1US51A

Mitsubishi Electric Semiconductor
Part No. MG400V1US51A
Description HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

File Size 114.33K  /  7 Page

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    SENSITRON SEMICONDUCTOR
Part No. 1N6620 SS6620 SS6623US SS6621US SS6622U
Description Ultrafast Recovery Rectifier
1 A, SILICON, RECTIFIER DIODE
1.2 A, SILICON, RECTIFIER DIODE

File Size 48.79K  /  3 Page

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    UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN121D UN121E UN121F UN121K UN121L

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN121D UN121E UN121F UN121K UN121L
Description C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms
Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit
Silicon NPN epitaxial planer transistor

File Size 177.68K  /  13 Page

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    Microsemi
Part No. 1N6323US 1N6311US 1N6309US
Description Zener Voltage Regulator Diode

File Size 102.26K  /  3 Page

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    1N6626 1N6627US 1N6630US 1N6631US

Sensitron
Part No. 1N6626 1N6627US 1N6630US 1N6631US
Description Ultrafast Recovery Rectifier

File Size 41.35K  /  3 Page

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    MG200Q1US51 E002172

Toshiba Semiconductor
Part No. MG200Q1US51 E002172
Description N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

File Size 304.79K  /  6 Page

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    MG400Q1US51 E002301

Toshiba Semiconductor
Part No. MG400Q1US51 E002301
Description From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

File Size 307.89K  /  6 Page

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    MG360V1US41 E002277

Toshiba Corporation
Toshiba Semiconductor
Part No. MG360V1US41 E002277
Description Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system

File Size 323.68K  /  6 Page

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    MG600Q1US51 EE08720

Toshiba Semiconductor
Part No. MG600Q1US51 EE08720
Description From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

File Size 303.82K  /  6 Page

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For 1US 121L Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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