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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
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Part No. |
ST24W01 ST24W01B1TR ST24W01B3TR ST24W01B5TR ST24W01B6TR ST24W01M1TR ST24W01M3TR ST24W01M5TR ST24W01M6TR ST25C01 ST25C01B1TR ST25C01B3TR ST25C01B5TR ST25C01B6TR ST25C01M1TR ST25C01M3TR ST25C01M5TR ST25C01M6TR ST24C01 ST24C01B1TR ST24C01B3TR ST24C01B5TR ST24C01B6TR ST24C01M1TR ST24C01M3TR ST24C01M5TR ST24C01M6TR ST24C01R ST24C01RB1TR ST24C01RB3TR ST24C01RB5TR ST24C01RB6TR ST24C01RM1TR ST24C01RM3TR ST24C01RM5TR ST24C01RM6TR ST24_25W01 2434 ST24 ST25W01M6TR ST25W01 ST25W01B1TR ST25W01B3TR ST25W01B5TR ST25W01B6TR ST25W01M1TR ST25W01M3TR ST25W01M5TR ST24C01B1 ST24C01RB1 ST24C01B3 ST25C01B3 ST24C01RB3 ST25C01M1 ST24C01RB5 ST25W01B1 ST24C01M6
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Description |
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 Cyclone FPGA 6K PQFP-240 I2C串行EEPROM MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.5W; Resistance, Rds on:0.015R; SMD:1; 1000串行EEPROM128 × 8 MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:40A; Power, Pd:1.9W; Resistance, Rds on:15R; SMD:1; Charge, gate 000串行EEPROM28 × 8 IC FLEX 10K AKA FPGA I2C串行EEPROM SERIAL 1K 128 x 8 EEPROM 000串行EEPROM28 × 8 Stratix GX FPGA 10K 4-FBGA IC FLEX 10KA FPGA IC FLEX 6000 FPGA 24K 208-PQFP IC APEX 20KE FPGA 200K IC FLEX 10KB FPGA 100K IC APEX 20KE FPGA 400K (ST2xxx) SERIAL 1K 128 x 8 EEPROM From old datasheet system SERIAL 1K (128 x 8) EEPROM
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File Size |
144.48K /
16 Page |
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TE Connectivity, Ltd. Intel, Corp. Intel Corp. Intel Corporation
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Part No. |
TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 28F400B3 28F800B3 GT28F008B3BA90 GT28F008B3TA110 GT28F008B3BA110 GT28F320B3BA90 GT28F032B3B110 GT28F800B3TA110 GT28F800B3B90 TE28F016B3B90 TE28F320B3B90 GT28F320B3T110 TE28F800B3T90 GT28F400B3B110 GT28F400B3BA110 GT28F032B3T90 GT28F016B3BA110 GT28F032B3BA90 TE28F032B3BA90 TE28F008B3T90 TE28F032B3T90 TE28F032B3T110 GT28F008B3TA90 TE28F032B3XXX
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Description |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭 TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
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File Size |
282.71K /
48 Page |
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意法半导 EEPROM STMicroelectronics N.V.
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Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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File Size |
144.80K /
25 Page |
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Part: B300D44A102XXG |
Maker: ON Semiconductor |
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