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    24C02 ST25C02B1TR ST25C02B3TR ST25C02B5TR ST25C02B6TR ST25C02M1TR ST25C02M3TR ST25C02M5TR ST25C02M6TR ST24C02 ST24C02B1T

STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. 24C02 ST25C02B1TR ST25C02B3TR ST25C02B5TR ST25C02B6TR ST25C02M1TR ST25C02M3TR ST25C02M5TR ST25C02M6TR ST24C02 ST24C02B1TR ST24C02B3TR ST24C02B5TR ST24C02B6TR ST24C02M1TR ST24C02M3TR ST24C02M5TR ST24C02M6TR ST24C02RB1TR ST24C02RB3TR ST24C02RB5TR ST24C02RB6TR ST24C02RM1TR ST24C02RM3TR ST24C02RM5TR ST24C02RM6TR ST24W02 ST24W02B1TR ST24W02B3TR ST24W02B5TR ST24W02B6TR ST24W02M1TR ST24W02M3TR ST24W02M5TR ST24W02M6TR ST25W02B1TR ST25W02B3TR ST25W02B5TR ST25W02B6TR ST25W02M1TR ST25W02M3TR ST25W02M5TR ST25W02M6TR ST24C02R ST24C02B1 ST24C02B3 ST24C02RB6 ST25W02 ST25C02
Description IC MAX 7000 CPLD 32 44-PLCC I2C串行EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K56 × 8)的EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K256 × 8)的EEPROM
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:189; Package/Case:240-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
IC MAX 7000 CPLD 32 44-TQFP
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak

File Size 143.96K  /  16 Page

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HUA FENG CIRCUIT





    http://
STMICROELECTRONICS[STMicroelectronics]
Part No. M27C256B06 M27C256B-90XF6TR M27C256B M27C256B-10B1TR M27C256B-10B3TR M27C256B-10B6TR M27C256B-10C1TR M27C256B-10C3TR M27C256B-10C6TR M27C256B-10F1TR M27C256B-10F3TR M27C256B-10F6TR M27C256B-10XB1TR M27C256B-10XB3TR M27C256B-10XB6TR M27C256B-10XC1TR M27C256B-10XC3TR M27C256B-10XC6TR M27C256B-10XF1TR M27C256B-10XF3TR M27C256B-10XF6TR M27C256B-12B1TR M27C256B-12B3TR M27C256B-12B6TR M27C256B-12C1TR M27C256B-12C3TR M27C256B-12C6TR M27C256B-12F1TR M27C256B-12F3TR M27C256B-12F6TR M27C256B-12XB1TR M27C256B-12XB3TR M27C256B-12XB6TR M27C256B-12XC1TR M27C256B-12XC3TR M27C256B-12XC6TR M27C256B-12XF1TR M27C256B-12XF3TR M27C256B-12XF6TR M27C256B-15B1TR M27C256B-15B3TR M27C256B-15B6TR M27C256B-15C1TR M27C256B-15C3TR M27C256B-15C6TR M27C256B-15F1TR M27C256B-15F3TR M27C256B-15F6TR M27C256B-15XB1TR M27C256B-15XB3TR M27C256B-15XB6TR M27C256B-15XC1TR M27C256B-15XC3TR M27C256B-15XC6TR M27C256B-15XF1TR M27C256B-15XF3TR M27C256B-15XF6TR M27C256B-25B1TR M27C256B-25B3TR M27C256B-25B6TR M27C256B-25C1TR M27C256B-25C3TR M27C256B-25C6TR M27C256B-25F1TR M27C256B-25F3TR M27C256B-25F6TR M27C256B-25XB1TR M27C256B-25XB3TR M27C256B-25XB6TR M27C256B-25XC1TR M27C256B-25XC3TR M27C256B-25XF1TR M27C256B-25XF3TR M27C256B-
Description 256 Kbit (32Kb × 8) UV EPROM and OTP EPROM
256 Kbit (32Kb 】 8) UV EPROM and OTP EPROM

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    ST24W01 ST24W01B1TR ST24W01B3TR ST24W01B5TR ST24W01B6TR ST24W01M1TR ST24W01M3TR ST24W01M5TR ST24W01M6TR ST25C01 ST25C01B

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. ST24W01 ST24W01B1TR ST24W01B3TR ST24W01B5TR ST24W01B6TR ST24W01M1TR ST24W01M3TR ST24W01M5TR ST24W01M6TR ST25C01 ST25C01B1TR ST25C01B3TR ST25C01B5TR ST25C01B6TR ST25C01M1TR ST25C01M3TR ST25C01M5TR ST25C01M6TR ST24C01 ST24C01B1TR ST24C01B3TR ST24C01B5TR ST24C01B6TR ST24C01M1TR ST24C01M3TR ST24C01M5TR ST24C01M6TR ST24C01R ST24C01RB1TR ST24C01RB3TR ST24C01RB5TR ST24C01RB6TR ST24C01RM1TR ST24C01RM3TR ST24C01RM5TR ST24C01RM6TR ST24_25W01 2434 ST24 ST25W01M6TR ST25W01 ST25W01B1TR ST25W01B3TR ST25W01B5TR ST25W01B6TR ST25W01M1TR ST25W01M3TR ST25W01M5TR ST24C01B1 ST24C01RB1 ST24C01B3 ST25C01B3 ST24C01RB3 ST25C01M1 ST24C01RB5 ST25W01B1 ST24C01M6
Description 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Cyclone FPGA 6K PQFP-240 I2C串行EEPROM
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.5W; Resistance, Rds on:0.015R; SMD:1; 1000串行EEPROM128 × 8
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:40A; Power, Pd:1.9W; Resistance, Rds on:15R; SMD:1; Charge, gate 000串行EEPROM28 × 8
IC FLEX 10K AKA FPGA I2C串行EEPROM
SERIAL 1K 128 x 8 EEPROM 000串行EEPROM28 × 8
Stratix GX FPGA 10K 4-FBGA
IC FLEX 10KA FPGA
IC FLEX 6000 FPGA 24K 208-PQFP
IC APEX 20KE FPGA 200K
IC FLEX 10KB FPGA 100K
IC APEX 20KE FPGA 400K
(ST2xxx) SERIAL 1K 128 x 8 EEPROM
From old datasheet system
SERIAL 1K (128 x 8) EEPROM

File Size 144.48K  /  16 Page

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    ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST95040M1TR ST95040M3TR ST95040M6TR ST95040WB1TR ST95040WB3TR ST95040WB6TR S

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST95040M1TR ST95040M3TR ST95040M6TR ST95040WB1TR ST95040WB3TR ST95040WB6TR ST95040WM1TR ST95040WM3TR ST95040WM6TR ST95010WB1TR ST95010WB3TR ST95010WB6TR ST95010WM1TR ST95010WM3TR ST95010WM6TR ST95020 ST95010 ST95020B1TR ST95020B3TR ST95020B6TR ST95020M1TR ST95020M3TR ST95020M6TR ST95020WB1TR ST95020WB3TR ST95020WB6TR ST95020WM1TR ST95020WM3TR ST95020WM6TR ST95010B3TR ST95010B6TR ST95010M3TR ST95010B1 ST95010M6TR ST95010M1TR ST95010B1TR ST95020W ST95040W ST95010W ST95020M3 ST95010WB6 ST95020WB6 ST95040WB6
Description 4K serial SPI EEPROM with positive clock strobe
4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE
(ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe
MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id
4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM,带有正时钟选
SPI Serial EEPROM SPI串行EEPROM
2K serial SPI EEPROM with positive clock strobe

File Size 108.57K  /  18 Page

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    TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 28F400B3 28F800B3 GT28F008B3BA90 GT28F008B3TA110 GT28F008B3BA110 GT28F

TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
Part No. TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 28F400B3 28F800B3 GT28F008B3BA90 GT28F008B3TA110 GT28F008B3BA110 GT28F320B3BA90 GT28F032B3B110 GT28F800B3TA110 GT28F800B3B90 TE28F016B3B90 TE28F320B3B90 GT28F320B3T110 TE28F800B3T90 GT28F400B3B110 GT28F400B3BA110 GT28F032B3T90 GT28F016B3BA110 GT28F032B3BA90 TE28F032B3BA90 TE28F008B3T90 TE28F032B3T90 TE28F032B3T110 GT28F008B3TA90 TE28F032B3XXX
Description (TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY

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    27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1X M27C512-12B3 M27C512-12B3TR M27C512-12B3X M27C512-12B6TR M27C512-12B

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. 27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1X M27C512-12B3 M27C512-12B3TR M27C512-12B3X M27C512-12B6TR M27C512-12B6X M27C512-12C M27C512-12C1TR M27C512-12C1X M27C512-12C3TR M27C512-12C3X M27C512-12C6TR M27C512-12C6X M27C512-12F1TR M27C512-12F1X M27C512-12F3TR M27C512-12F3X M27C512-12F6TR M27C512-12F6X M27C512-12N1TR M27C512-12N1X M27C512-12N3TR M27C512-12N3X M27C512-12N6TR M27C512-12N6X M27C512-12XB1TR M27C512-12XB1X M27C512-12XB3TR M27C512-12XB3X M27C512-12XB6TR M27C512-12XB6X M27C512-12XC1TR M27C512-12XC1X M27C512-12XC3TR M27C512-12XC3X M27C512-12XC6TR M27C512-12XC6X M27C512-12XF1TR M27C512-12XF1X M27C512-12XF3TR M27C512-12XF3X M27C512-12XF6TR M27C512-12XF6X M27C512-12XN1TR M27C512-12XN1X M27C512-12XN3TR M27C512-12XN3X M27C512-12XN6TR M27C512-15F1TR M27C512-15F1X M27C512-90 M27C512-10 M27C512-15B3TR M27C512-15B3X M27C512 M27C512-15 M27C512-15B1TR M27C512-15B1X M27C512-15B6TR M27C512-15B6X M27C512-15C1TR M27C512-15C1X M27C512-15C3TR M27C512-15C3X M27C512-15C6TR M27C512-15C6X M27C512-15F3TR M27C512-15F3X M27C512-15F6TR M27C512-15F6X M27C512-15N1TR M27C512-15N1X M27C512-15N3TR M27C512-15N3X M27C512-15N6TR M27C512-15N6X M27C512-15XB1TR M27C512-15XB1X M27C512-15XB3TR M27C512-15X
Description 512 Kbit (64Kb x8) UV EPROM and OTP EPROM
512 Kbit 64Kb x8 UV EPROM and OTP EPROM

File Size 147.43K  /  15 Page

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    CTS, Corp.
Part No. 251B12F253B1N1 251B000253C3T1 251B12F253C3T1 251B12F253C2NB 251B120252C2NB 251B000252C2NB 251B120252C2N1 251B120253C2N1 251B12F252C2NB 251B120252A3NB 251B000253A3NB 251B000253A2TB 251B00F252B3N1 251B00F252A3N1 251B000252B3N1 251B000252B3T1 251B120252B3T1 251B120252B3TB 251B120253B3T1 251B000252A3T1 251B00F252A1N1 251B000252A1T1 251B120252B2N1 251B000253C2T1 251B12F253B3NB 251B12F253C3N1 251B12F253C3NB 251B00F252B2T1 251B00F252C1T1 251B000252C2T1 251B120252B2TB 251B12F252A3T1 251B12F252A1TB
Description Long life, 9mm diameter, composition element, variable resistor 寿命长,直径毫米,组成要素,可变电阻

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    M24C02WDW6T M2404WBN3TG/S M2404WBN3TP/S M2404WBN6T/S M2404WBN6T/W M2404WBN6TP/S M2404WDS3TG/S M2404WDS6TG/W M2404WDS6TP/

STMicroelectronics
Part No. M24C02WDW6T M2404WBN3TG/S M2404WBN3TP/S M2404WBN6T/S M2404WBN6T/W M2404WBN6TP/S M2404WDS3TG/S M2404WDS6TG/W M2404WDS6TP/W M2404WDW3TG/S M2404WDW3TG/W M2404WDW3TP/S M2404WDW6TP/S M2404WMB3T/S M2404WMB3T/W M2404WMB3TP/W M2404WMB6T/W M2404WMN3TG/W M2404WMN6TG/S M2404WMN6TG/W M2401WBN3TP/S M2401RBN6TG/S M2401RBN6TG/W M2401WMB3T/S M2401WMB3T/W M2401WMB3TP/W M2401WBN6TG/W M2408WMB3TP/W M2402WMB6T/S M2402WMB6T/W M2401RMB3TG/S M2401WMN3TG/W M2416WDS3TG/S M2402WMB3T/S M2402WMB3T/W M2402RDW6TP/W M2401RMN3T/W M2401WDW3TG/S M2401WBN6T/S M2401WBN6TP/S M2401WBN6T/W M2401RMB6T/S M2401RDS6TG/S M2401RBN3TG/W M2401RDW6TG/W M2401WMB6T/S M2401WMB6T/W M2401RDW3TG/W M2402RBN6TP/W M2402WBN3TP/S M2401RMB6TP/S M2402RDW6TG/W M2408RBN6T/S M2408RBN6TP/S M2408RBN6TP/W M2408RDS3TG/S M2408RDW3TG/S M2408RDW6TG/W M2408RDW6TP/W M2408RMB3T/S M2408RMB3T/W M2408RMB6T/W M2408WMN6TP/W M2401RBN6TP/W M2401RMN6T/W M2408WDW3TG/S M2416RMB3T/S M2416RMB3T/W M2402RMN3TP/W M2404RMN3TG/W M2416WBN6T/S M2416WBN6T/W M2402RMN3T/W M2416WMN3TG/W M2416WDW6TP/S M2402RBN3TG/W M2416RBN6T/S M2416RBN6TP/S M2416RMN6TG/S M2416WMB3T/S M2416WMB3T/W M2416WMN6TG/S M2408RBN6TG/W M2408RDW3TG/W M2408RMB6T/S M2402WMN6TG/S M2416RBN6TG/W M2408RDS6TG/S M
Description 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM

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    M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3

意法半导
EEPROM
STMicroelectronics N.V.
Part No. M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM

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    STM8S105C4B3 STM8S105C4B3C STM8S105C4B3CTR STM8S105C4B3TR STM8S105C4B6 STM8S105C4B6C STM8S105C4B6CTR STM8S105C4B6TR STM8

STMicroelectronics
Part No. STM8S105C4B3 STM8S105C4B3C STM8S105C4B3CTR STM8S105C4B3TR STM8S105C4B6 STM8S105C4B6C STM8S105C4B6CTR STM8S105C4B6TR STM8S105C4T3 STM8S105C4T3C STM8S105C4T3CTR STM8S105C4T3TR STM8S105C4T6 STM8S105C4T6C STM8S105C4T6CTR STM8S105C4T6TR STM8S105C4U3 STM8S105C4U3C STM8S105C4U3CTR STM8S105C4U3TR STM8S105C4U6 STM8S105C4U6C STM8S105C4U6CTR STM8S105C4U6TR STM8S105C6B3 STM8S105C6B3C STM8S105C6B3CTR STM8S105C6B3TR STM8S105C6B6 STM8S105C6B6C STM8S105K4U3 STM8S105K4U3C STM8S105K4U3CTR STM8S105K4U3TR STM8S105S4B6C STM8S105S4B6CTR STM8S105S4B6TR STM8S105K6T6 STM8S105K6U3C STM8S105S6U3C STM8S105C6U3C STM8S105S4T6 STM8S105K4B3 STM8S105K4B3C STM8S105K4B3CTR STM8S105K4B3TR STM8S105K4B6 STM8S105K4B6C STM8S105K4B6CTR STM8S105K4B6TR STM8S105K4T3 STM8S105K4T3C STM8S105K4T3CTR STM8S105K4T3TR STM8S105K4T6 STM8S105K4T6C STM8S105K4T6CTR STM8S105K4T6TR STM8S105K4U6 STM8S105K4U6C STM8S105K4U6CTR STM8S105K4U6TR STM8S105K6B3 STM8S105K6B3C STM8S105K6B3CTR STM8S105K6B3TR STM8S105K6B6 STM8S105K6B6C STM8S105S4U3C
Description Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I漏梅C

File Size 1,288.33K  /  127 Page

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