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DB55ZA1T 16100 SV5100 S29GL128 GFWQ1012 40200 M4301 N3906
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    CPD106R

Central Semiconductor Corp
Part No. CPD106R
OCR Text die per 5 inch wafer 251,364 process cpd106r schottky diode schottky diode chip process details die size 8.3 x 8.3 mils die thickness 3.9 mils anode bonding pad area 5.4 x 5.4 mils top side metalization al - 30,000? back ...
Description Schottky Diode Chip

File Size 616.99K  /  2 Page

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    CP388X

Central Semiconductor Corp
Part No. CP388X
OCR Text die per 5 inch wafer 102,852 process cp388x small signal transistor npn - low noise amplifier transistor chip process epitaxial planar die size 13 x 13 mils die thickness 5.9 mils base bonding pad area 3.9 x 3.9 mils ...
Description Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip

File Size 643.41K  /  2 Page

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    SIRENZA[SIRENZA MICRODEVICES]
Part No. SNA-100S
OCR Text die form. This amplifier provides 12.2dB of gain at 1950 MHz and 10.3dB at 10,000 MHz. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size (0.350mm x 0.345mm) and gold metalliza...
Description DC-10 GHz, Cascadable GaAs HBT MMIC Amplifier

File Size 165.52K  /  3 Page

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    SP70114

Polyfet RF Devices
Part No. SP70114
OCR Text ...701 20:1 rohs compliant s1a 1 die id & gm vs vg 0.10 1.00 10.00 024681012141618 vgs in volts id in amps; gm in mhos id gm s1a 1 die capacit ance 1 10 100 1000 0 4 8 1216202428 vds in volts capacitance in pfs coss ciss crss sp701 pout...
Description RF POWER VDMOS TRANSISTOR

File Size 51.65K  /  2 Page

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    MAX811TEUS

Maxim Integrated Products
Part No. MAX811TEUS
OCR Text ...ackaging Information IV. .......die Information V. ........Quality Assurance Information VI. .......Reliability Evaluation ......Attachments I. Device Description A. General The MAX811T is a low-power microprocessor (P) supervisory circu...
Description PLASTIC ENCAPSULATED DEVICES

File Size 54.89K  /  8 Page

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