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  E660812E Datasheet PDF File

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E660812E-TC_L K4E640812E K4E640812E-JC_L K4E640812E-TC_L K4E660812E K4E660812E-JC_L K4E640812E-JC/L K4E660812E-JC/L K4E640812E-TC/L K4E660812E-TC/L
Description 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 189.50K  /  21 Page

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HUA FENG CIRCUIT





    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page

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