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6232A 5243 R28 3572 LMG7402 SMX 180N0 1145
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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...sipation Linear Derating Factor gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text gate Oxide Technology Lower Input Capacitance Improved gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V RDS(on) =...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...IVE AVALANCHE DATA AT 100oC LOW gate CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...IVE AVALANCHE DATA AT 100oC LOW gate CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND R...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...sipation Linear Derating Factor gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*9.0 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...kage. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VD...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...sipation Linear Derating Factor gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.0 2.5 10 2.0 0.016 20 3.0 -55 to + 150 -3.0 Max. P-Channel -2.5 -2.0 -10 Units A W W/C V V/ns C Thermal ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... Parameter Drain-Source Voltage gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol ...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ... Parameter Drain-Source Voltage gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... Parameter Drain-Source Voltage gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain CurrentQ Power DissipationS Schottky and Body Diode Average ForwardCurrentT 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symb...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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