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  mosfet Datasheet PDF File

For mosfet Found Datasheets File :: 7257    Search Time::0.937ms    
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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text MOS FET High Speed Power Switching ADE-208-541 1st. Edition Features * Low on-resistance R DS(on) = 25 m typ. * 4V gate drive devices. * High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drai...
Description Power switching mosfet
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features * Low on-resistance R DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2 G 1...
Description RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ492 2SJ492-S 2SJ492-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is P-Channel MOS Field Effect T...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SJ493 PACKAGE Isolated TO-220 DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for hig...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (i...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92 Mod D G ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D G ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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For mosfet Found Datasheets File :: 7257    Search Time::0.937ms    
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