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  n-channel silicon carbide powe Datasheet PDF File

For n-channel silicon carbide powe Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    GM195

E-Tech Electronics LTD
Part No. GM195
Description P N P S I L I CO N P L A N A R M E D I UM powe R T R A N S I S T O R

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    GM195A

E-Tech Electronics LTD
Part No. GM195A
Description P N P S I L I C O N P L A N A R M E D I UM powe R T R A N S I S T O R

File Size 409.77K  /  2 Page

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    GM194

E-Tech Electronics LTD
Part No. GM194
Description N P N S I L I CO N P L A N A R M E D I UM powe R T R A N S I S T O R

File Size 326.19K  /  2 Page

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    GM194A

E-Tech Electronics LTD
Part No. GM194A
Description N P N S I L I C O N P L AN A R M E D I UM powe R T R A N S I S T O R

File Size 340.59K  /  2 Page

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    Infineon
Part No. SDP10S30 SDB10S30SMD SDT10S30
Description silicon carbide Schottky Diodes - 10A diode in TO220-3 package
silicon carbide Schottky Diodes - 10A diode in TO263 package
silicon carbide Schottky Diodes - 10A diode in TO220-2 package

File Size 575.47K  /  9 Page

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    CREE poweR
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    NXPSC04650-15

NXP Semiconductors
Part No. NXPSC04650-15
Description silicon carbide Diode

File Size 151.65K  /  9 Page

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    NXPSC06650-15

NXP Semiconductors
Part No. NXPSC06650-15
Description silicon carbide Diode

File Size 151.25K  /  9 Page

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    NXPSC10650-15

NXP Semiconductors
Part No. NXPSC10650-15
Description silicon carbide Diode

File Size 151.64K  /  9 Page

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    SML100M12MSF SML010FBDH06 SML10SIC06YC SML05SC06D3A

Seme LAB
Part No. SML100M12MSF SML010FBDH06 SML10SIC06YC SML05SC06D3A
Description silicon carbide power

File Size 132.02K  /  2 Page

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For n-channel silicon carbide powe Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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