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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...A and 6.5A, 275V and 250V * rDS(ON) = 0.45 and 0.68 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Sw...Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surface Mount Component...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...4A and 13A, 275V and 250V * rDS(ON) = 0.28 and 0.34 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Sw...Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surface Mount Component...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text on) max 0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characteri...LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PRO...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...itching l VDSS 150V RDS(on) max 0.045 ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate...Line SMPS Topologies l Telcom 48V input DC/DC Active Clamp Reset Forward Converter Notes ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ... Summary Part Number BVDSS RDS(on) IRF360 400V 0.20 ID 25A IRF360 400V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processin...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...cluding Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Vol...LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...AN1001) l VDSS 500V Rds(on) max 0.85 ID 8.0A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC ...LINE C ONF O RMS T O JED EC O UT LIN E TO -220A B. 4 HE A TS IN K & LE A D ME AS UR E MEN TS D O NO ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ... Number IRF9230 BVDSS -200V RDS(on) 0.80 ID -6.5A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" des...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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    K4N33

KODENSHI[KODENSHI KOREA CORP.]
Kodenshi Corp
Part No. K4N33
OCR Text ...utput Isolation Resistance Turn-on Time Turn-off Time *4. CTR=(IC/IF) X 100 (%) RH=40~60%, V=500V VCC=10V, RL=100U IC=50mA, IF=200mA 2/3 Photocoupler K4N33 Forward Current vs. Ambient Temperature 60 Collector Power Dissipa...
Description Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

File Size 223.79K  /  3 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...ot using LOCK MECHANISM & POWER-ON AUTOt READ, connect it Vss.(Before) --> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or ...LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220F Unit :mm/Inch 0.10 MAX 0.004 #48 ( 0.25 ) 0.010 12.40 0.48...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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