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    AA028P2-99

SKYWORKS SOLUTIONS INC
Alpha Industries, Inc.
Alpha Industries Inc
Part No. AA028P2-99
OCR Text ...z Amplifier AA028P2-99 Co-planar Millimeterwave Package Handling and Mounting Millimeterwave amplifiers require careful mounting design to maintain optimal performance. Handling The co-planar millimeterwave package is very rugged...
Description 25000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
25-31 GHz Amplifier
251 GHz Amplifier

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    BCR5AS BCR5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR5AS BCR5
OCR Text planar PASSIVATION TYPE BCR5AS OUTLINE DRAWING Dimensions in mm 6.5 4 TYPE NAME VOLTAGE CLASS 5.50.2 1.50.2 5.00.2 0.50.1 0.9 MAX 1.0 2.3 2.3 MIN 1.0 MAX 10 MAX 0.50.2 0.8 case temperature 2....
Description MEDIUM POWER USE NON-INSULATED TYPE, planar PASSIVATION TYPE

File Size 76.62K  /  5 Page

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    1N974 1N970 1N963 1N965 1N962 1N967 1N978 1N957 1N957THRU1N978 1N958 1N959 1N960 1N961 1N964 1N966 1N968 1N969 1N971 1N9

http://
上海朗硕科技有限公司
CHENYI[Shanghai Lunsure Electronic Tech]
Chenyi Electronics
Shanghai Sunrise Electronics
Part No. 1N974 1N970 1N963 1N965 1N962 1N967 1N978 1N957 1N957THRU1N978 1N958 1N959 1N960 1N961 1N964 1N966 1N968 1N969 1N971 1N972 1N973 1N975 1N976 1N977
OCR Text planar power zener diodes . Standards zener voltage tolerance is 20%.Add suffix "A" for tolerance and suffix "B" for 5% tolerance other tolerance, non standards and higher zener voltage upon request 10% 1N957 THRU 1N978 0.5W SILICON PLA...
Description surface mount silicon Zener diodes
0.5W SILICON planar ZENER DIODES

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    BCR20AM BCR20AM-8L

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR20AM BCR20AM-8L
OCR Text planar PASSIVATION TYPE BCR20AM OUTLINE DRAWING Dimensions in mm 10.5 MAX. 4.5 16 MAX. 3.2 0.2 7.0 1.3 12.5 MIN. 3.6 TYPE NAME VOLTAGE CLASS 3.6 0.2 1.0 0.8 E 2.5 2.5 0.5 2.6 ............
Description 400 V, 20 A, TRIAC, TO-220
MEDIUM POWER USE NON-INSULATED TYPE/ planar PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, planar PASSIVATION TYPE

File Size 46.60K  /  5 Page

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    BCR8CS BCR8

POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR8CS BCR8
OCR Text planar PASSIVATION TYPE BCR8CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.60.3 9.80.5 TYPE NAME 3.0 -0.5 +0.3 0 -0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 123 24 2.60....
Description MEDIUM POWER USE NON-INSULATED TYPE, planar PASSIVATION TYPE

File Size 74.96K  /  5 Page

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    2N3502 2N3504 2N3505 2N3503

SemeLAB
SEME-LAB[Seme LAB]
Part No. 2N3502 2N3504 2N3505 2N3503
OCR Text ...95) 4.52 (0.178) PNP SILICON planar EPITAXIAL TRANSISTORS 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. FEATURES * SILICON planar EPITAXIAL PNP TRANSISTOR 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO18 M...
Description PNP SILICON planar EPITAXIAL TRANSISTORS

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    BCR10PM

Mitsubishi Electric Semiconductor
Part No. BCR10PM
OCR Text planar PASSIVATION TYPE BCR10PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS 3.20.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 * * * * * IT (R...
Description MEDIUM POWER USE INSULATED TYPE, planar PASSIVATION TYPE

File Size 82.79K  /  5 Page

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    AGILENT
Part No. DEMO-HSMP38-XX
OCR Text ...ductance Series (continued) Co-planar Waveguide Shunt Connection for HSMP-481x Series Co-planar waveguide, with ground on the top side of the printed circuit board, is shown in Figure 10. Since it eliminates the need for via holes to grou...
Description DEMO-HSMP38-XX 路 Demonstration Circuit Board

File Size 116.83K  /  10 Page

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    Fairchild
Part No. KSD5072
OCR Text ...ax=0.4s) NPN TRIPLE DIFFUSED planar SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION (DAMPER DIODE BUILT IN) TO-3PF ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base V...
Description Color TV Horizontal Output Application

File Size 120.71K  /  4 Page

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    AN605

Vishay Siliconix
Part No. AN605
OCR Text ...olysilicon gate layer along the planar surface. However, the planar structure has an effective finite level of cell density because the JFET pinch-off effect3 leads to an increased device on-resistance, compared with the Trench structure, a...
Description Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit

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