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ZM4762 ULCE4 4761A SED1560 S1E101MD MMBTA RUE800 1MD1WBE
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  recovery Datasheet PDF File

For recovery Found Datasheets File :: 80755    Search Time::1.219ms    
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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...arallel diodes with ultra- soft recovery * Industry standard package * UL approved Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.1V @VGE = 15V, IC = 75A Benefits * Increased operating efficiency * Direct mounting to heats...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    SIA431DJ

Vishay Siliconix
Part No. SIA431DJ
OCR Text ... 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 7.7 a, di/dt = 100 a/s, t j = 25 c 35 60 ns body diode reverse recovery charge q rr 21 35 nc reverse recovery fall time t a 20 ns reverse recovery rise time t b 15 document num...
Description P-Channel 20-V (D-S) MOSFET

File Size 218.96K  /  9 Page

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    SI8466EDB

Vishay Siliconix
Part No. SI8466EDB
OCR Text ... 0 0.7 1.2 v body diode reverse recovery time t rr i f = 2 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 715nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 15 output characteristic...
Description N-Channel 8 V (D-S) MOSFET

File Size 138.42K  /  9 Page

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    Luguang Electronic
Part No. SF1602G SF1607G SF1604G SF1605G
OCR Text ...0 400 ua ua maximum reverse recovery time (note 1) trr 35 ns typical junction capacitance (note 2) cj 80 60 pf typical thermal resistance (note 3) r jc 1.5 o c/w operating temperature range t j -65 to +150 o c stor...
Description (SF1601G - SF1608G) Glass Passivated Super Fast Rectifiers

File Size 245.72K  /  2 Page

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    SDS20U20S

Fairchild Semiconductor
Part No. SDS20U20S
OCR Text recovery ( trr < 40ns) * low forward voltage (v f =0.98v at i f =20a) applications * power switching circuits * output rectifiers * freewheeling diodes * switching mode power supply maximum ratings symbol v rrm i f(av) i fsm t j , t ...
Description POWER RECTIFIER

File Size 353.13K  /  6 Page

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    SDS06U20S

Fairchild Semiconductor
Part No. SDS06U20S
OCR Text recovery ( trr < 35ns) * low forward voltage (v f =0.98v at i f =6a) applications * power switching circuits * output rectifiers * freewheeling diodes * switching mode power supply maximum ratings symbol v rrm i f(av) i fsm t j , t s...
Description POWER RECTIFIER

File Size 345.27K  /  6 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from ca...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from ca...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from ca...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from ca...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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For recovery Found Datasheets File :: 80755    Search Time::1.219ms    
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