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For technology Found Datasheets File :: 135886    Search Time::2.079ms    
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    LITE-ON ELECTRONICS INC
Part No. LTL2P7UBK-0G1ABINL2
OCR Text technology corporation property of lite-on only features * low power consumption. * high efficiency. * versatile mounting on p.c. board or panel. * i.c. compatible/low current requirement. * t-1 3/4 type package. pa...
Description T-1 3/4 SINGLE COLOR LED, BLUE, 5 mm

File Size 627.42K  /  11 Page

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Part No. UPD703308GC-XXX-8BT
OCR Text ...and 70f3308y use superflash ? technology licensed from silicon storage technology, inc. windows and windows nt are either re gistered trademarks or trademar ks of microsoft corporation in the united states and/or other countries. pc...
Description 32-BIT, MROM, 20 MHz, RISC MICROCONTROLLER, PQFP80

File Size 4,875.72K  /  758 Page

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    RKR104BKH

Renesas Electronics Corporation
Part No. RKR104BKH
OCR Text ...uld not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. when exporting the p...
Description Silicon Schottky Barrier Diode for Rectifying

File Size 85.59K  /  6 Page

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    NX6514EH

Renesas Electronics Corporation
Part No. NX6514EH
OCR Text ... when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas ...
Description LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

File Size 192.93K  /  7 Page

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    NX6511GH

Renesas Electronics Corporation
Part No. NX6511GH
OCR Text ... when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas ...
Description LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

File Size 194.50K  /  7 Page

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    NX6510GH

Renesas Electronics Corporation
Part No. NX6510GH
OCR Text ... when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas ...
Description LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

File Size 194.28K  /  7 Page

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Part No. MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15
OCR Text ...source: 09005aef83169de6 micron technology, inc., reserves the right to change products or specifications without notice. mt41j1g4_64m_32m_twindie.fm - rev. d 11/09 en 1 ?2008 micron technology, inc. all rights reserved. twindie tm ddr3 s...
Description 64M X 4 DDR DRAM, 1.5 ns, PBGA78
32M X 8 DDR DRAM, 1.87 ns, PBGA78
32M X 8 DDR DRAM, 1.5 ns, PBGA78

File Size 455.80K  /  14 Page

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    H5N2802PF H5N2802PF-E

Renesas Electronics Corporation
Part No. H5N2802PF H5N2802PF-E
OCR Text ...our circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may le...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 48.63K  /  4 Page

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    FDMF3030

Fairchild Semiconductor
Part No. FDMF3030
OCR Text ...y ? fairchild powertrench ? technology mosfets for clean voltage waveforms and reduced ringing ? fairchild syncfet? technology (integrated schottky diode) in low-side mosfet ? integrated bootstrap schottky diode ? adaptive ga...
Description Extra-Small, High-Performance, High-Frequency, DrMOS Module

File Size 1,535.59K  /  19 Page

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