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LRC[Leshan Radio Company]
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| Part No. |
MMBTA70LT1
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| OCR Text |
transistor
PNP Silicon
3 COLLECTOR
MMBTA70LT1
3
1 BASE
2 EMITTER
1 2
MAXIMUM RATINGS
CASE 318-08, STYLE 6
Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous
Symbol V V
CEO EBO
... |
| Description |
General Purpose transistor(PNP Silicon)
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| File Size |
285.68K /
5 Page |
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it Online |
Download Datasheet
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MOTOROLA[Motorola, Inc]
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| Part No. |
MMDF2N06VL
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| OCR Text |
...
(c)Motorola TMOS Power MOSFET transistor Device Data Motorola, Inc. 1996
1
MMDF2N06VL
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ... |
| Description |
DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS
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| File Size |
114.88K /
4 Page |
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it Online |
Download Datasheet |
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MICROCHIP[Microchip Technology]
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| Part No. |
MCRF202-I_WQ99 MCRF202 MCRF202-I_P MCRF202-I_S MCRF202-I_SB MCRF202-I_SN MCRF202-I_W MCRF202-I_WB MCRF202-I_WF MCRF202-I_WFB
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| OCR Text |
... tuned LC circuit. A modulation transistor is placed between the antenna coil pads (VA and VB). The transistor turns on and off based on the modulation signal. As a result, the amplitude of the antenna coil voltage varies with the modulatio... |
| Description |
The MCRF202 is a passive Radio Frequency Identification (RFID) IC device with an external sensor Input that provides an RF interface for reading the contents of a user memory array. The MCRF202 is specially designed to detect the logic sta
125 kHz Passive RFID Device with Sensor Input
From old datasheet system
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| File Size |
245.97K /
20 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MMDF2N06V
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| OCR Text |
...
(c)Motorola TMOS Power MOSFET transistor Device Data Motorola, Inc. 1996
1
MMDF2N06V
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, I... |
| Description |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
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| File Size |
113.64K /
4 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MMDF3200Z
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| OCR Text |
...
(c)Motorola TMOS Power MOSFET transistor Device Data Motorola, Inc. 1997
1
MMDF3200Z
MAXIMUM RATINGS (TJ = 25C unless otherwise specified) When mounted on 1 inch square (25.40 mm square) FR-4 or G-10 board (VGS = 10 V @ 10 Seconds)... |
| Description |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
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| File Size |
83.17K /
4 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MMDF3NO2HD MMDF3N02HDR2
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| OCR Text |
...
(c)Motorola TMOS Power MOSFET transistor Device Data Motorola, Inc. 1996
1
MMDF3N02HD
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ... |
| Description |
TMOS DUAL N-CHANNEL FIELD EFFECT transistor
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| File Size |
176.09K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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