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  trench Datasheet PDF File

For trench Found Datasheets File :: 7567    Search Time::1.968ms    
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    SEMIX151GD12E4S

Semikron International
Part No. SEMIX151GD12E4S
OCR Text ... 450 -20 ... 20 SEMiX(R) 13 trench IGBT Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 189 141 150 450 900 -40 ... 175 600 -40 ... 125 IFnom Features * Homogeneous Si * trench = trenchgate technol...
Description trench IGBT Modules

File Size 163.64K  /  5 Page

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    IRGP4086PBF

International Rectifier
Part No. IRGP4086PBF
OCR Text trench IGBT Features l Advanced trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Cap...
Description PDP trench IGBT

File Size 244.21K  /  7 Page

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    SEMIX603GB066HDS09

Semikron International
Part No. SEMIX603GB066HDS09
OCR Text ... Values Unit SEMiX(R) 3s trench IGBT Modules SEMiX603GB066HDs Tj = 175 C IFnom Features * Homogeneous Si * trench = trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 ...
Description trench IGBT Modules

File Size 156.55K  /  6 Page

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    SKM400GB176D09

Semikron International
Part No. SKM400GB176D09
OCR Text trench IGBT Modules SKM 400GB176D SKM 400GAL176D Freewheeling Diode Inverse Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units GB GAL 1 06-10-2009 NOS ...
Description trench IGBT Modules

File Size 758.63K  /  6 Page

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    FDG1024NZ

Fairchild Semiconductor
Part No. FDG1024NZ
OCR Text trench(R) MOSFET August 2009 FDG1024NZ Dual N-Channel Powertrench(R) MOSFET 20 V, 1.2 A, 175 m Features Max rDS(on) = 175 m at VGS = 4.5 V, ID = 1.2 A Max rDS(on) = 215 m at VGS = 2.5 V, ID = 1.0 A Max rDS(on) = 270 m at VGS = 1.8...
Description Dual N-Channel Powertrench? MOSFET 20 V, 1.2 A, 175 mΩ
Dual N-Channel Powertrench垄莽 MOSFET 20 V, 1.2 A, 175 m楼?

File Size 281.92K  /  7 Page

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    SEMIX353GB176HDS09

Semikron International
Part No. SEMIX353GB176HDS09
OCR Text ... Values Unit SEMiX(R) 3s trench IGBT Modules SEMiX353GB176HDs Tj = 150 C IFnom Features * Homogeneous Si * trench = trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 ...
Description trench IGBT Modules

File Size 157.30K  /  6 Page

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    SEMIX703GD126HDC09

Semikron International
Part No. SEMIX703GD126HDC09
OCR Text ...Values Unit SEMiX(R) 33c trench IGBT Modules SEMiX703GD126HDc Tj = 150 C IFnom Features * Homogeneous Si * trench = trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * U...
Description trench IGBT Modules

File Size 157.66K  /  5 Page

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    APTGV100H60BTPG

Microsemi Corporation
Part No. APTGV100H60BTPG
OCR Text trench + Field Stop IGBT Power module trench & Field Stop IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 100A @ Tc = 80C CoolMOSTM Q5: VCES = 600V ; IC = 95A @ Tc = 25C CR3 K VBUS1 VBUS2 ...
Description Boost chopper CoolMos垄芒 full bridge NPT & trench Field Stop IGBT Power module

File Size 461.88K  /  15 Page

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    APTGV100H60T3G

Microsemi Corporation
Part No. APTGV100H60T3G
OCR Text trench + Field Stop(R) IGBT Power module trench & Field Stop(R) IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80C 13 14 Application CR3 Q3 11 10 Q1 18 19 CR1 * Solar con...
Description Full - Bridge NPT & trench Field Stop垄莽 IGBT Power module

File Size 370.21K  /  9 Page

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    PMXB120EPE PMXB120EPE-15

NXP Semiconductors
Part No. PMXB120EPE PMXB120EPE-15
OCR Text trench mosfet 24 september 2013 product data sheet scan or click this qr code to view the latest information for this product 1. general description p-channel enhancement mode field-effect transistor (fet) in a leadless ultra small dfn1010d...
Description 30 V, P-channel trench MOSFET
   30 V, P-channel trench MOSFET

File Size 244.77K  /  15 Page

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