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  trench Datasheet PDF File

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    INA-52063 INA-52063-BLK INA-52063-TR1

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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INA-52063 INA-52063-BLK INA-52063-TR1
OCR Text ...ment submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability. Applications * Amplifier fo...
Description Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:5; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:10-5
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
1.5 GHz Low Noise Silicon MMIC Amplifier 1.5千兆赫硅单片低噪声放大器

File Size 81.99K  /  7 Page

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    INA03184 INA-03184 INA-03184-BLK INA-03184-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA03184 INA-03184 INA-03184-BLK INA-03184-TR1
OCR Text ...ent, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. 84 Plastic Package Descrip...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

File Size 43.20K  /  4 Page

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    SI3447 SI3447DV SI3447DVQ SI3447DVNL

FAIRCHILD[Fairchild Semiconductor]
Part No. SI3447 SI3447DV SI3447DVQ SI3447DVNL
OCR Text ...ching speed. * High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Vo...
Description P-Channel 1.8V Specified Powertrench MOSFET

File Size 85.47K  /  5 Page

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    SI4480DY

FAIRCHILD[Fairchild Semiconductor]
Part No. SI4480DY
OCR Text ...itching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25C unless otherwise noted Absolute Maximum R...
Description 80V N-Channel Powertrench MOSFET

File Size 84.86K  /  5 Page

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    SI6943 SI6943DQ

Fairchild Semiconductor
Part No. SI6943 SI6943DQ
OCR Text ...6nC typical) * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Load switch * Motor drive * DC/DC conversion * Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7...
Description Dual P-Channel 2.5V Specified Powertrench MOSFET

File Size 74.77K  /  5 Page

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    ADG438 ADG438F ADG438FBN ADG438FBR ADG439F ADG439FBN ADG439FBR ADG439FBRW

Analog Devices, Inc.
AD[Analog Devices]
Part No. ADG438 ADG438F ADG438FBN ADG438FBR ADG439F ADG439FBN ADG439FBR ADG439FBRW
OCR Text ... against momentary shorting. 6. trench Isolation Eliminates Latch-up. A dielectric trench separates the p- and n-channel MOSFETs thereby preventing latch-up. 7. Improved OFF Isolation. trench isolation enhances the channel-to-channel isolat...
Description High Performance 4/8 Channel Fault-Protected Analog Multiplexers
?5 V, Fault Protected, 8-Channel High Performance Analog Multiplexer
5 V, Fault Protected, 4-Channel High Performance Analog Multiplexer

File Size 127.40K  /  8 Page

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    FDP6030 FDP6030BL FDB6030 FDB6030BL P6030

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDP6030 FDP6030BL FDB6030 FDB6030BL P6030
OCR Text ... suppressor. * High performance trench technology for extremely low RDS(ON). * 175C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25C unless otherwise noted TO-263AB FDB Series S A...
Description N-Channel Logic Level Powertrench MOSFET

File Size 373.93K  /  10 Page

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    FDS6930A

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6930A
OCR Text ...typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Powertrench process that h...
Description Dual N-Channel, Logic Level, PowertrenchTM MOSFET

File Size 193.35K  /  8 Page

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    FDS6982 FSD6982

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6982 FSD6982
OCR Text ...ical = 8.5nC). High performance trench technology for extremely low RDS(ON). Applications * Battery powered synchronous DC:DC converters. * Embedded DC:DC conversion. D2 D2 D1 D1 G2 S2 5 6 7 Q1 4 3 2 Q2 SO-8 G1 S1 8...
Description Dual N-Channel, Notebook Power Supply MOSFET

File Size 237.39K  /  12 Page

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    IRF5806

IRF[International Rectifier]
Part No. IRF5806
OCR Text trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86m@VGS = -4.5V 147m@VGS = -2.5V ID -4.0A -3.0A Description New trench HEXFET(R) Power MOSFETs from International Rect...
Description Power MOSFET(Vdss=-20V)

File Size 154.77K  /  8 Page

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