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  trench Datasheet PDF File

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    INA-02100

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HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02100
OCR Text ...ent, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. The recommended assembly procedu...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

File Size 49.46K  /  3 Page

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    INA-02170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INA-02170
OCR Text ...ent, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. 70 mil Package Description...
Description Low Noise Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier

File Size 43.06K  /  3 Page

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    INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1

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HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1
OCR Text ...ent, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Package 84 Package 86 D...
Description GT 10C 10#16 PIN PLUG 低噪声,可级联硅双极MMIC放大
GT 10C 10#16 SKT PLUG
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

File Size 63.07K  /  6 Page

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    IRF7328 IRF7328TR

International Rectifier
Part No. IRF7328 IRF7328TR
OCR Text trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS(on) max 21m@VGS = -10V 32m@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET(R) Power MOSFETs from International R...
Description    HEXFET Power MOSFET
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 106.75K  /  8 Page

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    NDS9430 NDS943002

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS9430 NDS943002
OCR Text ...tching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * Power management * Load switch * Battery protection D D D D SO-8 DD D D 5 6 7 4 3 2 1 ...
Description 30V P-Channel Powertrench MOSFET

File Size 136.28K  /  5 Page

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    SI4410DY

FAIRCHILD[Fairchild Semiconductor]
Part No. SI4410DY
OCR Text ...itching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications Battery switch Load switch Motor controls ' ' ' ' 62 6 6 6 * ...
Description Single N-Channel Logic Level Powertrench MOSFET

File Size 189.01K  /  3 Page

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    SI4431 SI4431DY SI4431DYNL

FAIRCHILD[Fairchild Semiconductor]
Part No. SI4431 SI4431DY SI4431DYNL
OCR Text ...tching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * DC/DC converter * Load switch * Motor Drive D D D D 5 6 4 3 2 1 SO-8 S S S ...
Description P-Channel Logic Level Powertrench MOSFET

File Size 91.90K  /  5 Page

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    SI9934DY SI9934DYL99Z SI9934DYL86Z

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. SI9934DY SI9934DYL99Z SI9934DYL86Z
OCR Text ... gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * * * * Load switch Motor drive DC/DC conversion Power management D2 D D2 D DD1 D1 D 5 6 7...
Description Dual P-Channel 2.5V Specified Powertrench MOSFET 5 A, 20 V, 0.05 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
5 A, 20 V, 0.05 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET SO-8

File Size 47.29K  /  3 Page

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    BUK7608-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7608-55
OCR Text ...le for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applicatio...
Description trenchMOS transistor Standard level FET

File Size 65.96K  /  8 Page

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    BUK9608-55

NXP Semiconductors
Philips Semiconductors
Part No. BUK9608-55
OCR Text ...ble for surface mounting Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applicatio...
Description trenchMOS transistor Logic level FET

File Size 68.11K  /  8 Page

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