Part Number Hot Search : 
LR9343 N1NK80Z 2815T EN8158B 5KE36 OV9285 12A50 K2744
Product Description
Full Text Search
  trench Datasheet PDF File

For trench Found Datasheets File :: 7567    Search Time::1.203ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    SKM300GB066D09

Semikron International
Part No. SKM300GB066D09
OCR Text trench IGBT Modules SKM 300GB066D Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 06-10-2009 NOS (c) by SEMIKRON SKM 300GB066D Characteri...
Description trench IGBT Modules

File Size 854.16K  /  6 Page

View it Online

Download Datasheet





    PMPB27EP

NXP Semiconductors
Part No. PMPB27EP
OCR Text trench mosfet 10 september 2012 product data sheet scan or click this qr code to view the latest information for this product 1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a leadless ...
Description 30 V, single P-channel trench MOSFET

File Size 246.29K  /  14 Page

View it Online

Download Datasheet

    FGA70N30TD

Fairchild Semiconductor
Part No. FGA70N30TD
OCR Text trench IGBT December 2007 FGA70N30TD 300V, 70A PDP IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.5V @ IC = 40A * High input impedance * Fast switching * RoHS complaint tm General Description Us...
Description 300V, 70A PDP IGBT

File Size 593.32K  /  9 Page

View it Online

Download Datasheet

    FGA25N120FTD

Fairchild Semiconductor
Part No. FGA25N120FTD
OCR Text trench IGBT April 2008 FGA25N120FTD 1200V, 25A Field Stop trench IGBT Features * Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) =1.6V @ IC = 25A * High input impedance * RoHS complaint tm ...
Description 1200V, 25A Field Stop trench IGBT

File Size 695.07K  /  9 Page

View it Online

Download Datasheet

    SKM400GB066D09

Semikron International
Part No. SKM400GB066D09
OCR Text trench IGBT Modules SKM 400GB066D Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 06-10-2009 NOS (c) by SEMIKRON SKM 400GB066D Charact...
Description trench IGBT Modules

File Size 856.82K  /  6 Page

View it Online

Download Datasheet

    SKM600GB066D09

Semikron International
Part No. SKM600GB066D09
OCR Text trench IGBT Modules SKM 600GB066D Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 06-10-2009 NOS (c) by SEMIKRON SKM 600GB066D Charact...
Description trench IGBT Modules

File Size 931.86K  /  6 Page

View it Online

Download Datasheet

    SEMIX223GD12E4C

Semikron International
http://
Part No. SEMIX223GD12E4C
OCR Text ...Values Unit SEMiX(R) 33c trench IGBT Modules SEMiX223GD12E4c Tj = 175 C IFnom Features * Homogeneous Si * trench = trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL...
Description trench IGBT Modules

File Size 147.86K  /  5 Page

View it Online

Download Datasheet

    2N7002P

NXP Semiconductors
Part No. 2N7002P
OCR Text trench MOSFET Rev. 01 -- 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usi...
Description 60 V, 0.3 A N-channel trench MOSFET

File Size 154.80K  /  16 Page

View it Online

Download Datasheet

    APTCV90TL12T3G

Microsemi Corporation
Part No. APTCV90TL12T3G
OCR Text trench + Field Stop IGBT4 Power Module trench & Field Stop IGBT4 Q2, Q3: VCES = 1200V ; IC = 50A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 900V ; ID = 23A @ Tc = 80C Application * Solar converter * Uninterruptible Power Supplies Features * Q2, ...
Description Three level inverter CoolMOS & trench Field Stop IGBT4 Power Module

File Size 237.08K  /  9 Page

View it Online

Download Datasheet

    FDMC8296

Fairchild Semiconductor
Part No. FDMC8296
OCR Text trench(R) MOSFET March 2008 FDMC8296 N-Channel Power trench 30V, 18A, 8.0m Features Max rDS(on) = 8.0m at VGS = 10V, ID = 12A Max rDS(on) = 13.0m at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on)...
Description N-Channel Power trench? MOSFET 30V, 18A, 8.0mΩ
N-Channel Power trench㈢ MOSFET 30V, 18A, 8.0mヘ

File Size 292.41K  /  7 Page

View it Online

Download Datasheet

For trench Found Datasheets File :: 7567    Search Time::1.203ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of trench

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.62265992164612