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0D0FL 01LFT IDT71V 0E128 PE308N AP1301 10211 FB3607
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  u.s.a Datasheet PDF File

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    CMV7106 CMV7106YR CMV7106YT CMV7106Y/R CMV7106Y

California Micro Device...
California Micro Devices Corporation
CALMIRCO[California Micro Devices Corp]
Part No. CMV7106 CMV7106YR CMV7106YT CMV7106Y/R CMV7106Y
OCR Text ...2 ) Di f fe r e n t i a l I n p u t Vo l t a g e Vo l t a g e a t I n p u t / Ou t p u t Pi n Su p p l y Vo l t a g e ( V+ t o V-) Cur r ent at I nput Pi n Cur r ent at Out put Pi n ( s ee Not e 3) Cu r r e n t a t Powe r Su p p l y Pi n L ...
Description CMV7106 LOW POWER, LOW VOLTAGE OP AMP WITH RRIO AND SHUTDOWN, SOT23-6 CMV7106低功耗,低电压运算放大器和RRIO和关机,采用SOT23 - 6
Operational Amplifier
Low voltage OPAMP with RPIO

File Size 142.90K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ... C , C olle ctor-to-E m itter C u rrent (A ) Total Switching Losses (mJ) RG TJ VCC VGE 10 = Ohm = 150 C = 480V = 15V 1000 V GE = 2 0 V TJ = 125C 100 2.0 S AF E O P ER AT IN G AR EA 10 1.0 0.0 0 5 10 15 20 25 ...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ...0 W 50 W 20 W 10 5W 10 U 1 rl ppe imi t 99 % Tj = 25C Tj = -40C Region of certain triggering 100 0.1 Condi...s) 100 VGD Low mi er li t 99 % 0.1 0.001 0.01 Tj = 125C 0.1 1 Gate tr...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR818SG47 DCR818SG46 DCR818SG48 DCR818SG DCR818SG44 DCR818SG45
OCR Text ...5C 99 % Tj = 125C 1% 1 U pp er lim it IT QS tp = 1ms dI/dt VGD Lo w er lim it 100 0.1 IRM 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) 100 0.1 0.001 0.01 0.1 1 Gate trigger cu...
Description Phase Control Thyristor

File Size 108.66K  /  8 Page

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    EL6295CJ EL6265C

Elantec Semiconductor
Part No. EL6295CJ EL6265C
OCR Text ...sequential damages. Printed in u.s.a. October 15, 2001 Elantec Semiconductor, Inc. 675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6020 Japan Technical...
Description 13 Channel, 60MHz, Switched Gain Pre-Amp

File Size 140.36K  /  2 Page

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    ESDA14V2SC6 ESDA6V1SC5 ESDA6V1SC6 ESDA5V3SC5 ESDA5V3SC6 ESDAXXSC6 ESDA14V2SC5 ESDA25SC6 ESDAXXSC5 ESDA14V2

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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
Part No. ESDA14V2SC6 ESDA6V1SC5 ESDA6V1SC6 ESDA5V3SC5 ESDA5V3SC6 ESDAXXSC6 ESDA14V2SC5 ESDA25SC6 ESDAXXSC5 ESDA14V2
OCR Text ... Switzerland - United Kingdom - u.s.a. http://www.st.com 7/7
Description QUAD TRANSIL ARRAY FOR ESD PROTECTION
DUAL TRANSIL ARRAY FOR ESD PROTECTION

File Size 68.34K  /  7 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...w er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 10...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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