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1G132 1N4683 MS241C 9945B BT5551 M8R13FAJ 8NBFJ M8R13FAJ
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    2SA872 2SA872A

HITACHI[Hitachi Semiconductor]
Part No. 2SA872 2SA872A
OCR Text ...-120 -5 -50 300 150 -50 to +150 unit V V V mA mW C C Electrical Characteristics (Ta = 25C) 2SA872 Item Collector to emitter breakdown voltage Collector cutoff current Symbol Min V(BR)CEO I CBO 1 2SA872A Max -- -0.5 -- 800 -- Min -12...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 36.33K  /  7 Page

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    2SA879

PANASONIC[Panasonic Semiconductor]
Part No. 2SA879
OCR Text unit: mm 4.90.2 q High collector to emitter voltage VCEO. +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Col...
Description Silicon PNP epitaxial planer type

File Size 45.28K  /  3 Page

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    2SA886 2SA0886

PANASONIC[Panasonic Semiconductor]
Part No. 2SA886 2SA0886
OCR Text ...to 2SC1847 3.160.1 3.80.3 unit: mm 8.0+0.5 -0.1 3.20.2 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curre...
Description Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

File Size 89.38K  /  5 Page

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    2SA893 2SA893A

HITACHI[Hitachi Semiconductor]
Part No. 2SA893 2SA893A
OCR Text ...-120 -5 -50 300 150 -55 to +150 unit V V V mA mW C C Electrical Characteristics (Ta = 25C) 2SA893 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SA893A Max -- -0.5 -- 800 Min Typ Max --...
Description Silicon PNP Epitaxial

File Size 23.37K  /  5 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ...lementary to 2SC1980 5.00.2 unit: mm 4.00.2 q q High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25C) Ratings -120 -120 -5 -50 -20 250 150 -55 ~ +150 unit V V V mA mA mW C C s Absolute Maximum Ratings Parame...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.24K  /  2 Page

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Part No. FS30AS-06-T23
OCR Text ... 25c) parameter symbol ratings unit conditions drain-source voltage v dss 60 v v gs = 0 v gate-source voltage v gss 20 v v ds = 0 v drain current i d 30 a drain current (pulsed) i dm 120 a avalanche drain current (pulsed...
Description 30 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 73.02K  /  7 Page

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    TOSHIBA
Part No. 2SK3128
OCR Text ... characteristics symbol rating unit drain ? source voltage v dss 30 v drain ? gate voltage (r gs = 20 k ? ) v dgr 30 v gate ? source voltage v gss 20 v dc (note 1) i d 60 a drain current pulse (note 1) i dp 180 a d...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) Chopper Regulator, DC .DC Converter and Motor Drive Applications

File Size 120.06K  /  3 Page

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    Panasonic
Part No. 2SK3124
OCR Text unit: mm 2sk3124 silicon n-channel power f-mos fet features avalanche energy capacity guaranteed high-speed switching no secondary breakdown high electrostatic breakdown voltage applications high-speed switching (switching pow...
Description Power Device - Power MOS FETs

File Size 58.04K  /  2 Page

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    2SB1001

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1001
OCR Text ...6 -6 -2 -3 1 150 -55 to +150 unit V V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Colle...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 31.26K  /  6 Page

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    2SB1002

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1002
OCR Text ...-6 -1 -1.5 1 150 -55 to +150 unit V V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Colle...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.84K  /  6 Page

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