PART |
Description |
Maker |
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 |
4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|
MX23C4096 23C4096 MX23C4096QC-20 MX23C4096PC-10 MX |
4M-BIT [256K x 16] CMOS MASK ROM 4分位[256K × 16]的CMOS掩膜ROM From old datasheet system
|
Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers Macronix 旺宏 ETC[ETC] Macronix International
|
KM641001A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
|
http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
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