| PART |
Description |
Maker |
| STP40NF1007 STP40NF10 |
N-channel 100V - 0.025 - 50A TO-220 Low gate charge STripFET II Power MOSFET
N-channel 100V - 0.025з - 50A TO-220 Low gate charge STripFET⑩ II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STD40NF10 STP40NF10 |
N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET
|
STMicroelectronics
|
| STP50NE10L |
50 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 100V - 0.020 OHM - 50A - TO-220 STRIPFET POWER MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| NTD4970N-1G NTD4970NT4G |
8.5 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
| FDS3992_04 FDS3992 FDS3992NL FDS399204 |
Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDPF3860T |
100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| S76121P S76121S |
47A, 30V, 0.021 OHM, N-CHANNEL, LOGIC LEVEL ULTRAFET POWER MOSFETS
|
Suntac Electronic Corp.
|
| 1N5399S 1N5391 1N5391_1 1N5391S 1N5392 1N5392S 1N5 |
RECTIFIER STANDARD SINGLE 1.5A 200V 200 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
RECTIFIER STANDARD SINGLE 1.5A 100V 100 50A-ifsm 5uA-ir 1.1V-vf DO-15 1K/BULK
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
RECTIFIER STANDARD SINGLE 1.5A 50V 50 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-41
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-41 5K/AMMO 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-41
1.5A RECTIFIER
|
Diodes, Inc.
DIODES[Diodes Incorporated]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| 9476GM AP9476GM |
7.8 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET
Lower Gate Charge, Simple Drive Requirement
|
ADVANCED POWER ELECTRONICS CORP
Advanced Power Electronics Corp.
|
|
