PART |
Description |
Maker |
MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
MP4412 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
GT40T101 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
Toshiba Semiconductor
|
2SK153006 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
Toshiba Semiconductor
|
2SK246706 2SK2467 |
Silicon N Channel MOS Type High-Power Amplifier Application
|
Toshiba Semiconductor
|
2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS MOS Field Effect Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|