PART |
Description |
Maker |
M5M5256DFP-10VLL M5M5256DFP-10VXL M5M5256DFP-12VLL |
From old datasheet system Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256CFP-12VLL M5M5256CFP-12VXL M5M5256CFP-15VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal Transparent D-Type Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp. Cypress Semiconductor, Corp.
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M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
TC551632J |
32768 Word x 16-Bit CMOS Static RAM
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Toshiba Semiconductor
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M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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TC55V8200FT-12 TC55V8200FT-15 TC55V8200FT-10 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TOSHIBA[Toshiba Semiconductor]
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TC55V8512FTI-15 TC55V8512JI-15 TC55V8512FTI-12 TC5 |
524,288-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TOSHIBA[Toshiba Semiconductor]
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TC55V8512J-15 TC55V8512J-12 TC55V8512FT-15 TC55V85 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS From old datasheet system (TC55V8512J/FT) 8-Bit CMOS SRAM 524,288-WORD BY 8-BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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TC551001 TC551001BFL-70L TC551001BFL-85L TC551001B |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
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TOSHIBA[Toshiba Semiconductor]
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HN27256G-25 |
32768-word x 8-Bit UV Erasable and Programmable ROM
|
Hitachi Semiconductor
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