| PART |
Description |
Maker |
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
From old datasheet system
VHF variable capacitance diode(VHF 可变电容二极
HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
|
NXP Semiconductors
Philips Semiconductors
Philipss
Quanzhou Jinmei Electro...
|
| HVU200A |
29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
|
Hitachi,Ltd.
|
| HVD400C |
2.145 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC417C |
Diodes>Variable Capacitance
Variable Capacitance Diode for tuner
|
RENESAS[Renesas Electronics Corporation]
|
| HVU359 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| BBY39 BBY39_1 BBY39/T1 |
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
UHF variable capacitance diode(UHF 可变电容双二极管)
UHF variable capacitance double diode
From old datasheet system
|
Philips Semiconductors
Philipss
NXP Semiconductors
|
| HVD372B HVD372B06 HVD372B-06 |
Variable Capacitance Diode for VCO
16 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Renesas Electronics Corporation
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| 1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
|
