PART |
Description |
Maker |
SAE81C52 SAE81C52G SAE81C52P |
From old datasheet system 256 x 8-Bit Static CMOS RAM NMOS-Compatible
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Siemens Semiconductor Group
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CAT22C10LI-20 |
256 bit NV CMOS Static RAM 64 X 4 NON-VOLATILE SRAM, 200 ns, PDIP18
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ON Semiconductor
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS61LV25616 IS61LV2561 IS61LV25616-10T IS61LV25616 |
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY ASYNCHRONOUS STATIC RAM 256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256 × 16高速异步的CMOS静态RAM.3V电源
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Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc] Integrated Silicon Solution, Inc.
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FM93C06E FM93C06 FM93C06V FM93C06L FM93C06LZ FM93C |
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus) The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 From old datasheet system 256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus) 256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS) 256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
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Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM (M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor RENESAS[Renesas Electronics Corporation]
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AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1 PCB COPPER CLAD 6X9 1/32 2-SIDE DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM) 65,536-Word x 18-Bit CMOS STATIC RAM From old datasheet system 65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM)的
|
OKI SEMICONDUCTOR CO., LTD.
|
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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