PART |
Description |
Maker |
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE 30 V, SILICON, VARIABLE CAPACITANCE DIODE VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
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HVU200A |
29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
|
Hitachi,Ltd.
|
KV1471K KV1471KA KV1471KTR |
VARIABLE CAPACITANCE DIODE UHF BAND, 35.6 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
TOKO, Inc. TOKO Inc TOKO[TOKO, Inc]
|
BB142 BB142115 |
4.6 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
HVU202B |
Diodes>Variable Capacitance Variable Capacitance Diode for UHF/VHF tuner
|
Renesas Electronics Corporation
|
HVC383B |
20 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
BB640 Q62702-B589 |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners Bd I) Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) From old datasheet system Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] Siemens Group
|
1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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