PART |
Description |
Maker |
LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled 5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc. ICE COMPONENTS INC
|
ND24106L BSS129 ND2406L ND2410L 70198 |
N-Channel Depletion-Mode MOSFET Transistor(??ぇ婕??瀵奸??甸?0惟锛?す???娴?.15A??娌????敖??OSFET?朵?绠? N-Channel Depletion-Mode MOSFET Transistor(最大漏源导通电0Ω,夹断电.15A的N沟道耗尽型MOSFET晶体 N沟道耗尽型MOSFET晶体管(最大漏源导通电0Ω,夹断电.15A的N沟道耗尽型MOSFET的晶体管 From old datasheet system N-Channel Depletion-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
|
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
3N211 3N212 3N213 |
Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion) Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion)
|
Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc]
|
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
2N2535N5 2N2535N3 2N2540N3 2N2540N5 2N2540N8 DN253 |
350V N-channel depletion - Mode vertical DMOS FET 400V N-channel depletion - Mode vertical DMOS FET N-Channel Depletion-Mode Vertical DMOS FETs
|
Supertex Inc
|
BF256 BF256C BF256A BF256B |
VHF/UHF Amplifier(N-Channel, Depletion) 甚高超高频放大器(N沟道,耗尽 VHF/UHF Amplifier(N-Channel/ Depletion)
|
MOTOROLA INC Motorola Mobility Holdings, Inc. Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc]
|
2N3819 2N3819-D |
JFET VHF/UHF Amplifier N-Channel - Depletion JEET VHF/UHF Amplifier N-channel-Depletion
|
ONSEMI[ON Semiconductor]
|
ALD1108E ALD1108EDC ALD1108EPC ALD1108ESC ALD1110E |
QUAD/DUAL EPADPRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩) QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD) QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD? QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD 双电可编程模拟器件(EPAD⑩)
|
ALD[Advanced Linear Devices] Advanced Linear Devices, Inc.
|
DN2535N3-G DN2535N5-G |
N-Channel Depletion-Mode Vertical DMOS FETs 0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Supertex, Inc.
|
SD5501 SD5501N XSD5501 |
N-Channel Depletion-Mode 4-Channel DMOS FET Array
|
Calogic LLC CALOGIC[Calogic LLC] CALOGIC[Calogic, LLC]
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