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DF50AA160 - DIODE (THREE PHASES BRIDGE TYPE)

DF50AA160_1232316.PDF Datasheet

 
Part No. DF50AA160 DF50AA120
Description DIODE (THREE PHASES BRIDGE TYPE)

File Size 228.57K  /  2 Page  

Maker

SANREX[SanRex Corporation]



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Part: DF50AA160
Maker: SANREX
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Unit price for :
    50: $40.15
  100: $38.15
1000: $36.14

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 Full text search : DIODE (THREE PHASES BRIDGE TYPE)


 Related Part Number
PART Description Maker
DF30CA120 DF30CA80-160 DF30CA80 DF30CA160 THREE PHASE DIODE MODULES (BRIDGE)
(DF30CA80/120/160) DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
SANREX[SanRex Corporation]
DF30DB80 DF30DB40 DIODE(THREE PHASES BRIDGE TYPE)
SANREX[SanRex Corporation]
DF100LB160 DF100LA_LB80-160 DF100LB80 DF100LA DF10 THREE PHASE DIODE MODULES DF-LA/LB SERIES
From old datasheet system
DIODE(THREE PHASES BRIDGE TYPE)
SANREX[SanRex Corporation]
ETC
SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA):   Package: CMPAK-6
3-Phase Bridge Rectifier IGBT braking chopper
Semikron International
SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ 三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
Semikron International
DF30BA80 DF30BA40 DF30BA40-80 (DF30BA40/80) DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
SANREX[SanRex Corporation]
S8119 MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
Hamamatsu Photonics K.K.
S3901-FX MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
Hamamatsu Photonics
UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
意法半导
STMicroelectronics N.V.
NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
NEC
VBO36-12NO8 VBO20-16NO2 VBE20-20NO1 FBO40-12N VBO6 3 PHASE, 30 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
31 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) 20 A, 2000 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Rectifier Bridgein ISOPLUS i4-PAC-TM 40 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Single Phase Rectifier Bridge 65 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
IXYS, Corp.
IXYS CORP
 
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