| PART |
Description |
Maker |
| 2SC4854 2SC4854-5 2SC4854-4 |
晶体管|晶体管|叩| 6V的五（巴西）总裁| 15mA的一c）|36AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Low-Voltage Low-Current High-Frequency Amp Applications
Low-Voltage, Low-Current High-Frequency Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| TC9402 TC9400 TC9402CPD TC9400COD TC9400CPD TC9400 |
The TC9400/TC9401/TC9402 are low-cost voltage-to-frequency (V/F)converters utilizing low power CMOS technology. The converters accept a variable analog input signal and generate an output pulse train whose frequency is linearly proportiona
Voltage-to-Frequency/Frequency-to-Voltage Converters
|
Microchip Technology
|
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| KSD288 KSD288YTU KSD288Y |
Power Regulator Low Frequency High Power Amplifier
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| ILA5737D |
Low-power high-frequency triple (metric waves
|
INTEGRAL[Integral Corp.]
|
| KSC1623 |
NPN (LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC)
|
SAMSUNG[Samsung semiconductor]
|
| KSD73 KSD73O KSD73Y KSD73YTSTU KSD73YTU |
NPN Epitaxial Silicon Transistor
Low Frequency High Power Amplifier
|
Fairchild Semiconductor
|
| P2084A P2082A P2084A-08TT P2082A-08SR P2082A-08ST |
312 MHz, OTHER CLOCK GENERATOR, PDSO8
Low Cost Frequency Multiplier
High Precision Frequency Multipliers
|
ALSC[Alliance Semiconductor Corporation]
http://
|
| 2SC4703-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
California Eastern Labs
|
