PART |
Description |
Maker |
1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960 |
15V, 0.5W Zener Diode 33V, 0.5W Zener Diode 10V, 0.5W Zener Diode 12V, 0.5W Zener Diode 22V, 0.5W Zener Diode 18V, 0.5W Zener Diode 16V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode Half Watt Zeners Zeners General Purpose Diodes
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
BZX55C2V4 BZX55C39 BZX55C43 BZX55C56 BZX55C9V1 BZX |
Zeners 5.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode 4.7V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 3.9V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 6.2V, 0.5W Zener Diode 5.6V, 0.5W Zener Diode 33V, 0.5W Zener Diode 4.3V, 0.5W Zener Diode 3.3V, 0.5W Zener Diode 10V, 0.5W Zener Diode 11V, 0.5W Zener Diode 13V, 0.5W Zener Diode 12V, 0.5W Zener Diode 8.2V, 0.5W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1 |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance. 0.5W SILICON ZENER DIODES Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) PC 4/ 5-ST-7,62 .5W硅稳压二极管 Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance. 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance. 0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.
|
JGD[Jinan Gude Electronic Device] 济南固锝电子器件有限公司 Jinan Gude Electronic Device Co., Ltd. Semtech, Corp. 娴???洪??靛??ㄤ欢?????? Jinan Gude Electronic D...
|
BZV48C9V1 BZV48C10 BZV48C100 BZV48C11 BZV48C110 BZ |
124 to 141V; P(tot): 5W; zener diode 104 to 116V; P(tot): 5W; zener diode 114 to 127V; P(tot): 5W; zener diode 94 to 106V; P(tot): 5W; zener diode ZENER DIODES
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] http://
|
STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
意法半导
|
VN340SPTR-E VN340SP-E -VN340SP-E |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.06 to 6.33; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.26 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 四高端智能电源固态继电器 Quad high side smart Power solid state relay
|
EPCOS AG STMicroelectronics
|
DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管,不受ESD保护外延平面 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
CMF02 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Switching Mode Power Supply Applications
|
Toshiba Corporation Toshiba Semiconductor
|
1N6268A 1N6268ARL4 1N6270ARL4 1N6269A 1.5KE220ARL4 |
Zener 7.5V 1500W 5% Zener 9.1V 1500W 5% Zener 8.2V 1500W 5% 1500 Watt Mosorb Zener Transient Voltage Suppressors Zener 20V 1500W 5% Zener 6.8V 1500W 5% Zener 27V 1500W 5% Zener 130V 1500W 5% Zener 12V 1500W 5% Zener 56V 1500W 5% Zener 33V 1500W 5% Zener 150V 1500W 5% Zener 51V 1500W 5% Zener 91V 1500W 5% Zener 82V 1500W 5% Zener 16V 1500W 5% Zener 18V 1500W 5% Zener 24V 1500W 5% Zener 30V 1500W 5% Zener 36V 1500W 5% Zener 43V 1500W 5% Zener 120V 1500W 5% Zener 68V 1500W 5%
|
ON Semiconductor
|