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HAT2126RP - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2126RP_4263180.PDF Datasheet

 
Part No. HAT2126RP
Description Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

File Size 254.61K  /  17 Page  

Maker


Renesas Electronics Corporation



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: HAT2103R-EL-E
Maker: RENESAS
Pack: SOP
Stock: 3460
Unit price for :
    50: $0.60
  100: $0.57
1000: $0.54

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