PART |
Description |
Maker |
BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
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NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
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HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
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Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
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BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 VHF variable capacitance double diodes 甚高频双可变电容二极
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PHILIPS[Philips Semiconductors] Philipss NXP Semiconductors N.V.
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HVL355CM |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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HVU359 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE 30 V, SILICON, VARIABLE CAPACITANCE DIODE VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
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KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V) From old datasheet system Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
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Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
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1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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MICROSEMI CORP-LOWELL
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