PART |
Description |
Maker |
K4D263238I-UC |
128M GDDR SDRAM
|
Samsung
|
HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
HY5DU121622CTP-4 HY5DU121622CTP-5 HY5DU121622CTP-6 |
512Mb(32Mx16) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU283222AQ HY5DU283222AQ-33 HY5DU283222AQ-36 HY |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU283222AF-22 HY5DU283222AF-28 HY5DU283222AF-33 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
W9412G2CB |
1M × 4 BANKS × 32 BITS GDDR SDRAM
|
Winbond
|
W9412G2IB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
K4D263238I-VC |
128M-Bit GDDR SDRAM
|
Samsung Electronics
|
HY5DW283222BF HY5DW283222BF-2 HY5DW283222BF-22 HY5 |
128M(4Mx32) GDDR SDRAM 4M X 32 DDR DRAM, 0.6 ns, PBGA144 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144
|
Hynix Semiconductor, Inc.
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM 8M X 16 DDR DRAM, 0.6 ns, PDSO66 8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|