| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 1SS184 |
Ultra High Speed Switching
|
WILLAS ELECTRONIC CORP
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS226 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| HN4D02JU |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS193 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS18707 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS19307 1SS193 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS38207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN1D03F |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
