| PART |
Description |
Maker |
| SI4826DY |
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
|
Vishay
|
| ZXMN3F318DN8 ZXMN3F318DN8TA |
30V SO8 Asymmetrical dual N-channel enhancement mode
|
Diodes Incorporated
|
| STL50N25N3LLH5 |
Dual N-channel 30 V, 6 mOhm typ., 14.6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 asymmetrical double island package
|
ST Microelectronics
|
| SSRP105B1 9111 SSRP105B1RL SSRP105 |
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 5647 SSRP130 SSRP130B1 SSRP130B1RL |
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE - (ASD)
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE - (ASD)
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| TISP1082L |
DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
|
POINN[Power Innovations Ltd]
|
| CA82C12-10CD CA82C12-10CP CA82C12-10CJ CA82C12-10I |
TRANSIL
I/O Port
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE I / O端口
|
Rubycon, Corp.
|
| LPC4317 LPC4300 LPC4312 LPC4313 LPC4315 LPC4310 LP |
First asymmetrical, dual-core digital signal controller featuring Cortex-M4 & Cortex-M0
|
NXP Semiconductors
|
| APTGT100DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| FDMS9600S08 FDMS9600S FDMS9600S-08 |
30V Dual N-Channel PowerTrenchMOSFET
Dual N-Channel PowerTrench? MOSFET
Dual N-Channel PowerTrench㈢ MOSFET
Dual N-Channel PowerTrench庐 MOSFET
|
Fairchild Semiconductor
|
