| PART |
Description |
Maker |
| AN1228 |
How to relate LMOS device parameters to RF performance
|
STMicroelectronics
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| SI4362BDY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
Vishay Siliconix
|
| SI2303BDSRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4434DY-RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI7401DN-RC |
R-C Thermal Model Parameters 遥控模型参数
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| DAC1408D650W2 |
SW interface to easily program DAC parameters
|
NXP Semiconductors
|
| UPD70F3726 |
Parameters for 32-Bit V850ES/KX2 Devices
|
NEC Electronics Inc.
|
