| PART |
Description |
Maker |
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| SPW17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ100L C67078-S1354-A2 BUZ100LC67078-S1348-A2 BUZ |
N-Channel SIPMOS Power Transistor
Omnifet : fully autoprotected Power MOSFET
SIPMOS ? Power Transistor
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
http://
|
| IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 SP000 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| 2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A)
Power Transistor (-60V, -3A)
Power Transistor (-60V -3A)
Power Transistor(-60V, -3A)
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
|
ROHM[Rohm]
|
| SPI07N65C3 SPA07N65C3 SPP07N65C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC Corp.
NEC[NEC]
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
|
