| PART |
Description |
Maker |
| EPC-1300-1.0-1 EPC-1.00-1.0-1 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-0 EPC-13.0-1.0-0 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.5-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-470-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| KIP-107-1 |
1.25G InGaAs PIN Photodiode Chip
|
KODENSHI KOREA CORP.
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S8865-64 S8865-128 S8865 |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| MXP22-C |
Multi Element Opto Arrays
Monolithic Photodiode Array-Chip
|
MICROSEMI[Microsemi Corporation]
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Corporation
|
| S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Photonics
|
