| PART |
Description |
Maker |
| ZXGD3003E6 ZXGD3003E6TA ZXGD3003E6-15 |
5A(peak) gate driver in SOT23-6
5A(PEAK) GATE DRIVER IN SOT26
|
Diodes Incorporated
Zetex Semiconductors
|
| VC-710-DFF-GFM-200.000 VC-710 VC-710-DFC-GFA-125.0 |
CRYSTAL 20.0000 MHZ 18PF SMD 压控晶体振荡
CONNECTOR ACCESSORY 连接器附
Voltage Controlled Crystal Oscillator 压控晶体振荡
RECTIFIER SCHOTTKY DUAL 10A 45V 125A-ifsm 0.7V-vf 0.1mA-ir TO-220AB 50/TUBE 压控晶体振荡
RECTIFIER SCHOTTKY SINGLE 10A 40V 150A-ifsm 0.84V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY SINGLE 10A 45V 150A-ifsm 0.84V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY SINGLE 10A 50V 150A-ifsm 0.95V-vf 0.1mA-ir TO220AC 50/TUBE
RECTIFIER SCHOTTKY DUAL 10A 40V 125A-ifsm 0.7V-vf 0.1mA-ir TO-220AB 50/TUBE
XTAL CER SMT 6X3.5 2PAD
AB 6C 6#16 SKT PLUG
|
Electronic Theatre Controls, Inc.
ETC[ETC]
Vectron International, Inc
|
| S10SC4M |
Schottky Rectifiers (SBD) (40V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| D10SC4M |
Schottky Rectifiers (SBD) (40V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| BTS5240L |
Smart High Side Switches - 4,5-28V(40V Loaddump), 2x25m Limit(scr) 10A/40A P-DSO-12
Smart High Side Switches - 4,5-28V(40V Loaddump), 2x25m? Limit(scr) 10A/40A P-DSO-12
Addendum for PCN-Datasheet 2004-018-A
|
Infineon Technologies AG
|
| IRF7470 |
Power MOSFET(Vdss=40V/ Rds(on)max=13mohm/ Id=10A)
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
|
IRF[International Rectifier]
|
| IRF7471 |
Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)
|
IRF[International Rectifier]
|
| CDBD10100-G CDBD1040-G |
Schottky Barrier Rectifiers Diodes, V-RRM=100V, V-R=100V, I-O=10A
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=10A
|
Comchip Technology
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| MBRF1045CT-G MBRF1030CT-G MBRF1060CT-G MBRF10100CT |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
|
Comchip Technology
|
| M39208-10WNA6T M39208-12WNA1T M39208-12WNB6T M3920 |
256K X 8 FLASH 2.7V PROM, 120 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 100 ns, PDSO32
RECTIFIER SCHOTTKY DUAL 5A 40V 110A-Ifsm 0.5Vf 0.2A-IR PowerDI-5 5K/REEL 单芯2 Mbit闪存4千位并行EEPROM存储
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory 单芯2 Mbit闪存4千位并行EEPROM存储
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir A405 5K/REEL-13
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13
RECTIFIER SCHOTTKY SINGLE 10A 40V 275A-Ifsm 0.51Vf 0.7A-IR PowerDI-5 5K/REEL
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 150ns 5uA-ir DO-41 5K/REEL-13
DIODE, SCHOTTKY, 40V, 10A, POWER DI 5
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13
|
NUMONYX
STMicroelectronics N.V.
ST Microelectronics
意法半导
|
