PART |
Description |
Maker |
FMM50-025TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
IXFV110N25T IXFV110N25TS |
Trench Gate Power HiperFET
|
IXYS Corporation
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
FT0018 FT0018-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, Inc Solid States Devices, I...
|
FT0020 FT0020-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, I...
|
FT0021 FT0021-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, I...
|
CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
SFF35N20Z SFF35N20M |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|