| PART |
Description |
Maker |
| SL1212101-A |
BUZZER,PIEZO,3200Hz,87dB, 3Vp-p,70mA,SMD 电路保护热敏电阻
BUZZER,E/M,2400Hz,85dB, 1.5Vp-p,70mA,SMD,GRAY 电路保护热敏电阻
|
Ametherm, Inc.
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM
Low Power SDRAM
4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM
128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
| HYB18TC256160AF |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
| HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800C |
x16 SDRAM
179 POS FR-4 PGA SOCKET
x8 SDRAM x8 SDRAM内存
|
Infineon Technologies AG
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| IBM13T8644HPC IBM13T8644HPB IBM13T8644HPB-10T |
8M x 64 SDRAM SO DIMM（Small Outline Dual In-line Memory Modules8M x 64 144脚小外形双列直插同步动态RAM模块)
x64 SDRAM Module X64的内存模
|
IBM Microeletronics
飞思卡尔半导体(中国)有限公司
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
