PART |
Description |
Maker |
CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory 70ns 1M-bit CMOS flash memory 55ns 1M-bit CMOS flash memory 45ns 1M-bit CMOS flash memory 1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor http://
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CAT28F020HI-12T CAT28F020 CAT28F020HI-90T CAT28F02 |
2 Megabit CMOS Flash Memory 2 Mb CMOS Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
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M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位).0伏的CMOS只,引导扇区闪存 Connector 连接 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区闪存 256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|
EN29LV800B70RSIP EN29LV800T70RSIP EN29LV800B70RS E |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 8兆位024K × 812k × 16位)闪存引导扇区闪存,CMOS 3.0伏, 122 x 32 pixel format, LED or EL Backlight available
|
Electronic Theatre Controls, Inc. Eon Silicon Solution Inc.
|
MBM29LV160TM90 MBM29LV160BM90TN MBM29LV160BM90PBT |
FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM 闪存的CMOS 16米(2米x 8/1M × 16)位MirrorFlashTM FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc. Spansion, Inc.
|
W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
|
Winbond Electronics WINBOND[Winbond]
|
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
EN29LV320AB-90BI EN29LV320AB-70T EN29LV320AB-70TP |
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 32兆位096K × 8 2048K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
|
Eon Silicon Solution, Inc.
|
EN29LV320B-70TC EN29LV320T-70TC EN29LV320B-70BCP E |
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 32兆位096K × 8 2048K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
|
Electronic Theatre Controls, Inc. Eon Silicon Solution, Inc.
|