PART |
Description |
Maker |
HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM 4M x 4 Bit 4k 5 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM -4M x 4-Bit Dynamic RAM 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HN462732 |
4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY 4096 word x 8 Bit UV Erasable and EPROM
|
Hitachi Semiconductor
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AT71201M |
Full field image sensor, 4096 x 4096 pixels, 4 x 40 MHz
|
Atmel
|
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns 4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns 4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM 4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM -4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
MCM2114 |
4096-Bit Static RAM
|
Motorola Semiconductor
|
MCM2114P45 MCM2114P-45 |
4096-Bit Static RAM 4096 Bit Static RAM
|
Motorola / Freescale Semiconductor
|
UPD791 |
4096-BIT CCD IMAGE SENSOR
|
NEC
|
AM27S25 |
4096-Bit Bipolar Registered PROM
|
AMD
|