PART |
Description |
Maker |
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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BF994SA BF994SB BF994S BF994 |
From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
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STH15NA50 STH15NA50FI STW15NA50 STH15NA50_FI |
N-CHANNEL Power MOS MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管(不适用沟道增强模式快速功率MOSFET的) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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STB5NA80 4891 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
IRF520 IRF520FI 3002 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
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APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
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Microsemi Corporation
|
STT3434 |
N-Channel Enhancement Mode Mos.FET N-Channel Enhancement Mode Power Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
2N7002CSM |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
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