| PART |
Description |
Maker |
| FDMS2572 |
N-Channel UltraFET Trench MOSFET 27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FQAF28N15 |
150V N-Channel MOSFET 22 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STF23NM60ND STI23NM60ND STW23NM60ND STP23NM60ND ST |
N-channel 600 V - 0.150 ヘ - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh⑩ II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh?/a> II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh II Power MOSFET
N-channel 600 V - 0.150 楼? - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh垄芒 II Power MOSFET
|
http://
STMicroelectronics
|
| 2SK3591-01MR 2SK3591 |
N-CHANNEL SILICON POWER MOSFET 40 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IRF5802PBF |
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-193AA
SMPS MOSFET
|
International Rectifier
|
| FDP2570 FDB2570 |
150V N-Channel PowerTrench MOSFET 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
150V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STF23NM60N STI23NM60N STW23NM60N STP23NM60N STB23N |
N-channel 600 V - 0.150 ヘ - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh⑩ Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET
N-channel 600 V - 0.150 楼? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh垄芒 Power MOSFET
|
http://
STMicroelectronics
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| FMP36-015P IXYSCORP-FMP36-015P |
Polar P & N-Channel Power MOSFETs Common Drain Topology
36 A, 150 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET ISOPLUS, I4-PAC-5
|
IXYS Corporation
IXYS, Corp.
|
|
