| PART |
Description |
Maker |
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFK48N55 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?50V,瀵奸??甸?10m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| IXFE44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN60N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFN44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFX180N10 IXFK180N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS
100V HiperFET Power MOSFET
Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| BUZ900P BUZ901P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N?CHANNEL POWER MOSFET
|
Magnatec
Seme LAB
|
