PART |
Description |
Maker |
UPC37M32 |
(UPC37M31 / UPC37M32) BIPOLAR ANALOG INTEGRATED CIRCUIT
|
NEC
|
2N3440S |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
|
SEME-LAB[Seme LAB]
|
STRS6703 STRS6704 STR-S6703 STR-S6704 |
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A,输出功率直40W00V输出,带双极开关晶体管的脱线开关稳压器) (STRS6703 / STRS6704) OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
|
Allegro MicroSystems, Inc.
|
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
AM27S29 AM27S29ADC AM27S29AJC AM27S29A AM27S29SA A |
4096 Bit Bipolar PROM 4,096-Bit (512x8) Bipolar PROM
|
http:// AMD[Advanced Micro Devices]
|
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
UGN3132LT UGN3132U UGN3132UA UGN3133LT UGN3133U UG |
Ultra-Sensitive Bipolar Hall Effect switch(超敏感双极霍尔效应开 MC 5P M/MP TERMINATOR RoHS Compliant: Yes (UGS3133) ULTRA-SENSITIVE BIPOLAR HALL-EFFECT SWITCHES
|
http:// ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
ESM1602B ESM1602BFP |
VOLT COMPARATOR,QUAD,BIPOLAR,DIP,14PIN,PLASTIC VOLT COMPARATOR,QUAD,BIPOLAR,SOP,16PIN,PLASTIC From old datasheet system
|
ST Microelectronics
|