| PART |
Description |
Maker |
| GL-6201 |
Twin Triode
|
General Electric
|
| 6SL7-GT 12SL7-GT |
TWIN TRIODE
|
General Electric Company
|
| 12AX7 |
TWIN TRIODE 双三极管
|
General Electric Company
General Electric Solid State
|
| 6B10 |
Duplex Diode Twin Triode
|
General Electric
|
| RCA-5719 |
HIGH-MU TRIODE
|
List of Unclassifed Manufacturers
|
| 3CPX1500A7 |
HIGH - MU POWER TRIODE 穆功率三极管
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Eimac
|
| 6AW8 |
HIGH-MU TRIODE-SHARP-CUTOFF PENTODE
|
List of Unclassifed Manufacturers
|
| ECC84 |
Miniature High Slope Double Triode
|
BRIMAR
|
| HTT1115E |
High Frequency Amplifiers(Twin Type)
|
Hitachi Semiconductor
|
| BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications)
From old datasheet system
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MBR12060CT MBR12060CTR |
High Power Schottky Rectifiers - Twin Tower Modules
|
America Semiconductor
|
| BF987 Q62702-F35 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability)
From old datasheet system
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
