| PART |
Description |
Maker |
| CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18）流水线的SRAM的总线延迟TM架构
9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18）流水线的SRAM的总线延迟，TM架构
|
Cypress Semiconductor Corp.
|
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter
15V, 20W DC-DC converter
12V, 20W DC-DC converter
Analog IC
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp.
M.S. Kennedy Corporation
|
| A28F400BX-B |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
|
Intel Corp.
|
| CY62148EV30LL-45ZSXA |
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 2.20 to 3.60 V; 512K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| CY7C1460AV25 CY7C1462AV25 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1460AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
| CY7C1370DV25 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM（NoBL结构 18兆位（为512k × 36/1M × 18）与总线延迟建筑18 MB的（12k × 36/1M × 18）管道式静态存储器（总线延迟结构）流水线的SRAM
|
Cypress Semiconductor Corp.
|
| CY7C1380DV25-250BZXI CY7C1380DV25-200BZC CY7C1380D |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| CY7C1371D |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)流通式SRAM（NoBL结构 18兆位（为512k × 36/1M × 18）流体系结构，通过与总线延迟18 MB的（12k × 36/1M × 18）流通式的SRAM（总线延迟结构）的SRAM
|
Cypress Semiconductor Corp.
|
| TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
|
