| PART |
Description |
Maker |
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TLP832 |
INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP830F TLP83007 TLP830 |
Infrared LED Phototransistor
|
Toshiba Semiconductor
|
| TLP803 |
PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLP831F |
PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLP803 |
PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
Toshiba Semiconductor
|
| TLP828 |
Photo-interrupter Which incorporates a GaAs infrared LED and a fast response Si Phototransistor in a Dust-proof package.
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| OED-PT8L OED-PT304R2 OED-PT23G |
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-2B
PHOTOTRANSISTOR | DARLINGTON | 850NM PEAK WAVELENGTH | 5M | LED-7B
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-7B 光电晶体管|达林顿| 800NM峰值波长| 500万|发光二极 7B
|
Lumex, Inc.
|
| IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm
1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| QSE214 QSE213 |
PLASTIC SILICON INFRARED PHOTOTRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
|
| OP500SR OP500SRA OP500SRD OP500SRB |
Infrared selected NPN silicon phototransistor.
|
Optek Technology
|
| QSB363 |
SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR
|
Fairchild Semiconductor
|
